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蔡佳修
友達光電股份有限公司 Principal Engineer
Experienced Principal R&D Engineer in Oxide-TFT (IGZO) device fabrications. Specialized in developing new TFT semiconductor device into mass production including the process parameter tuning of CVD(Chemical Vapor Deposition), Dry Etch(RIE/ ECCP/ ICP), and PVD(Sputter).
Career experiences are extended from my education background with a Master's degree of National Tsing Hua University in chemistry.
友達光電
National Tsing Hua University
Taiwan
Taiwan
Professional Background
- Current statusEmployed・Open to opportunities
- ProfessionProcess Engineer・Researcher・Product Engineer
- FieldsSemiconductor
- Work experience10-15 years (10-15 years relevant)
- ManagementI've had experience in managing 1-5 people
- Skills
- LanguagesEnglish・Fluent
- Highest level of educationMaster
Job search preferences
- Desired job typeFull-time・Not interested in working remotely
- Desired positions工程師
- Desired work locations
- Freelance
Work Experience
Principal R&D Engineer (Project leader)
Taiwan
Oxide-TFT(IGZO) for X-ray sensor :
● 1st AUO New IGZO product released to MP
● TFT device optimization & analysis
● Full process experiment plan & debug
● Flexible type sensor development
● CsI & GOS scintillator lamination
+ Pixel Clever evaluation
+ TFT & Photodiode IV analysis
+ Test key design
+ X-ray hardness(radiation) test
+ Lot handling for more PEPs fabrication
Senior R&D Engineer (Project leader)
Taichung City, Taiwan
Oxide-TFT(IGZO) for Large Size TV :
● Evaluate Capa. impact and investment at the ramp-up phase
● New equipment setups and TFT device fabrication process flow building
● Plan experiment schedule and DOE of detail process parameter
● Debug and trouble shooting
● Yield improved by process parameter, Q-time, and transfer route optimization
+ TFT device IV and stress analysis
+ Pixel design optimize
+ Panel reliability test
+ Lot handling
Senior R&D Engineer (Process & Design)
Taichung City, Taiwan
● Mask OPC evaluation and developement in G6,G7.5,G8.5
● New tech. mask import to exceed the photo resolution
● Photo resistance simulation by diversity mask design
+ Dry etching parameter improvement to meet final metrology & critical dimension
+ Investigation of physical etching in RIE, ECCP, ICP equipments.
+ Different etch gas evalution & introduction.
+ Patent writing to protect OPC invention
